Difference Between Silicon Carbide Crucible and Graphite Crucible

The main difference between SIC crucible and graphite crucible is their high temperature resistance, service life, thermal conductivity and oxidation sensitivity.

High temperature resistance and service life: Silicon carbide crucible has better high temperature resistance and longer service life compared with graphite crucible. Silicon carbide crucible can withstand higher temperatures, so it is more stable in high temperature environments with a relatively long service life.

The thermal conductivity of graphite crucible is good, this makes the graphite crucible in the need for rapid heating or need good thermal conductivity applications better performance, however, this also means that the graphite crucible is susceptible to oxidation at high temperatures, resulting in a higher breakage rate.

Oxidation sensitivity: Graphite crucible is prone to oxidation, which results in a higher breakage rate at high temperatures. In contrast, silicon carbide crucible is more resistant to oxidation, making it more stable and reliable for long-term high temperature use.

Above all, the silicon carbide crucible excels over the graphite crucible in high-temperature resistance, service life, and oxidation sensitivity, while the graphite crucible performs better in thermal conductivity. The selection of the most suitable crucible depends primarily on the specific application requirements and working environment.